Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
High DC Current Gain
: hFE= 750(Min) @IC= 3A
Low Collector Saturation Voltage
: VCE(sat)= 2.5V(Max.)@ IC= 3A
Complement to Type BDX34D
Minimum Lot-to-Lot variations for robust device
performance and reliable operat
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isc Silicon NPN Darlington Power Transistor
BDX33D
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage
: VCE(sat)= 2.5V(Max.)@ IC= 3A ·Complement to Type BDX34D ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
BDX33D Datasheet
