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BDX63A - Silicon NPN Darlington Power Transistor

Download the BDX63A datasheet PDF. This datasheet also covers the BDX63 variant, as both devices belong to the same silicon npn darlington power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector Current -IC= 8A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDX62/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applicat

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Note: The manufacturer provides a single datasheet file (BDX63_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX63 80 VCBO Collector-Base Voltage BDX63A 100 BDX63B 120 BDX63C 140 BDX63 60 VCEO Collector-Emitter Voltage BDX63A 80 BDX63B 100 BDX63C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak 12 IB Base Current-Continuous 0.
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