BDX63 - NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR

TT Electronics

Datasheet Details

Part number	BDX63
Manufacturer	TT Electronics
File Size	552.52 KB
Description	NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
Datasheet	BDX63 Datasheet

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Other Datasheets by TT Electronics

Part Number	Description
BDX63A	NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX63B	NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX63C	NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX66	PNP DARLINGTON SILICON POWER TRANSISTOR
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NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C Hermetic TO3 Metal Package Ideally Suited for General Purpose Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) BDX63 BDX63A BDX63B VCEO VCBO VEBO Drain – Source Voltage Gate – Source Voltage Continuous Drain Current, Per Device 60V 80V 100V 80V 100V 120V 5V IC Collector Current ICM Collector Current (peak) IB Base Current Ptot Total Power Dissipation @ TC = 25°C TJ Junction Temperature Range 8A 12A 150mA 90W -55 to +200°C Tstg Storage Temperature Range -65 to +200°C BDX63C 120V 140V THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.