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BDY55X - Silicon NPN Power Transistor

The BDY55X by Inchange Semiconductor is a Silicon NPN Power Transistor. Below is the official datasheet preview.

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Official preview page of the BDY55X Silicon NPN Power Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number BDY55X
Manufacturer Inchange Semiconductor
File Size 207.40 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BDY55X-InchangeSemiconductor.pdf
Additional preview pages of the BDY55X datasheet.

BDY55X Product details

Description

Excellent Safe Operating Area DC Current Gain- : hFE=20-100@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7

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