Datasheet Details
| Part number | BU2527AX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.56 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU2527AX Download (PDF) |
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| Part number | BU2527AX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.56 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU2527AX Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 12 A ICM Collector Current-Peak 30 A IB Base Current- Continuous 8 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 45 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU2527AX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
isc Silicon NPN Power Transistor BU2527AX.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU2527AX | Silicon Diffused Power Transistor | NXP |
 |
BU2527A | Silicon Diffused Power Transistor | Philips |
 |
BU2527A | SILICON POWER TRANSISTOR | SavantIC |
 |
BU2527A | NPN Transistor | INCHANGE |
|
BU2527AF | Silicon Diffused Power Transistor | NXP |
| Part Number | Description |
|---|---|
| BU2527AW | Silicon NPN Power Transistor |
| BU2532AW | Silicon NPN Power Transistor |
| BU2727DX | SILICON POWER TRANSISTOR |