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Inchange Semiconductor

BUL58B Datasheet Preview

BUL58B Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL58B
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 100V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.2V(Max) @ IC= 1A
·High Speed Switching
APPLICATIONS
·Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
250 V
VCEO Collector-Emitter Voltage
100 V
VEBO Emitter-Base Voltage
10 V
IC Collector Current-Continuous
12 A
ICM Collector Current-peak
17 A
IB Base Current-Continuous
PC
Collector Power Dissipation
TC=25
Ti Junction Temperature
Tstg Storage Temperature Range
4A
50 W
150
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BUL58B Datasheet Preview

BUL58B Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL58B
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
ICEO
ICBO
IEBO
hFE-1
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
VCE= 80V; IB= 0
VCB= 250V; IE= 0
VCB= 250V; IE= 0, TC= 125
VEB= 9V; IC= 0
VEB= 9V; IC= 0, TC= 125
IC= 0.3A; VCE= 4V
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
hFE-3
DC Current Gain
IC= 5A; VCE= 1V
COB Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 4V
MIN TYP. MAX UNIT
100 V
250 V
10 V
0.2 V
0.6 V
1.5 V
1.1 V
1.4 V
100 μA
10
100
μA
10
100
μA
30 80
25 60
5
44 pF
20 MHz
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number BUL58B
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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