BUV20
BUV20 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.) @IC= 25A
- High DC Current Gain-
: h FE= 20(Min.)@ IC= 25A
- High Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high speed, high current, high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W
BUV20 isc website：.iscsemi....
