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BUV20 Datasheet Preview

BUV20 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.) @IC= 25A
·High DC Current Gain-
: hFE= 20(Min.)@ IC= 25A
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed, high current, high power
applications.
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
160
V
125
V
7
V
50
A
60
A
10
A
250
W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.7 /W
BUV20
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BUV20 Datasheet Preview

BUV20 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUV20
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0
125
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A
0.6
V
VCE(sat)-2Collector-Emitter Saturation Voltage IC= 50A; IB= 5A
1.2
V
VBE(sat) Base-Emitter Saturation Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 50A; IB= 5A
VCE= 140V;VBE= -1.5V
VCE= 140V;VBE= -1.5V;TC=125
VCE= 100V; IB= 0
2.0
V
3.0
12
mA
3.0 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 25A; VCE= 2V
20
60
hFE-2
DC Current Gain
IC= 50A; VCE= 4V
10
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BUV20
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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