Datasheet Details
| Part number | IRF470 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 35.71 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 IRF470 Datasheet
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| Part number | IRF470 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 35.71 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
IRF470 Datasheet
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·Repetitive Avalanche Ratings ·Dynamic dv/dt Rating ·Hermetically Sealed ·Simple Drive Requirements ·Ease of Paralleling APPLICATIONS ·Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-continuous@ TC=25℃ 24 A Total Dissipation@TC=25℃ 300 W Max.
Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.42 30 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF470 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
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