IRF510 Key Features
- Low RDS(on) -VGS Rated at ±20V -Silicon Gate for Fast Switching Speed -Rugged -Low Drive Requirements
- DESCRITION -Designed especially for high voltage,high speed
- Part: IRF510
- Manufacturer: Inchange Semiconductor (official site)
- Size: 39.28 KB
Other IRF510 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
IRF510 | N-Channel Power MOSFET |
Vishay |
IRF510 | Power MOSFET |
International Rectifier |
IRF510 | Power MOSFET |
|
Fairchild |
IRF510A | Advanced Power MOSFET |
|
International Rectifier |
IRF510PBF | HEXFET POWER MOSFET |
IRF510 Description
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510.