IRF530FI Key Features
- Low RDS(on) -VGS Rated at ±20V -Silicon Gate for Fast Switching Speed -Rugged -Low Drive Requirements
- DESCRITION -Designed especially for high voltage,high speed
- Part: IRF530FI
- Manufacturer: Inchange Semiconductor (official site)
- Size: 58.47 KB
Other IRF530FI Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
IRF530FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
STMicroelectronics |
IRF530FP | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
Motorola Semiconductor |
IRF530 | N-Channel MOSFET |
|
STMicroelectronics |
IRF530 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
International Rectifier |
IRF530 | Power MOSFET |
IRF530FI Description
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF530FI.