With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source
Absolute Maximum Ratings Tc=25
SYMBOL VDSS VGS ID Ptot Tj Tstg.
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MOSFET
IRF630
N-channel mosfet transistor
INCHANGE
Features
With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source
Absolute Maximum Ratings Tc=25
SYMBOL VDSS VGS ID Ptot Tj Tstg
PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25 Total Dissipation@TC=25 Max. Operating Junction temperature Storage temperature
RATING 200 20 9 74 150
-65~150
UNIT V V A W
123
TO-220
Electrical Characteristics Tc=25
SYMBOL
PARAMETER
V(BR)DSS Drain-source breakdown voltage
CONDITIONS
VGS=0; ID=0.25mA
VGS(TH) Gate threshold voltage
VDS= VGS; ID=1mA
RDS(ON) Drain-source on-stage resistance
VGS=10V; ID=5.
IRF630 Datasheet
