IRF821 transistor equivalent, n-channel mosfet transistor.
*Lower Input Capacitance
*Improved Gate Charge
*Extended Safe Operating Area
*Rugged Gate Oxide Technology
DESCRIPTION
*Designed for use in switch mo.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Co.
*Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
450 ±20
V V
ID Drain Current-Cont.
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