IRF821 Key Features
- Lower Input Capacitance -Improved Gate Charge -Extended Safe Operating Area -Rugged Gate Oxide Technology
- Part: IRF821
- Manufacturer: Inchange Semiconductor (official site)
- Size: 62.75 KB
Other IRF821 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
ART CHIP |
IRF821 | N-Channel Power MOSFET |
Fairchild |
IRF821 | N-Channel Power MOSFET |
Motorola Semiconductor |
IRF821 | N-Channel Power MOSFET |
Samsung Semiconductor |
IRF821 | N-Channel Power MOSFET |
Harris |
IRF821 | N-Channel Power MOSFETs |
IRF821 Description
·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 450 ±20 V V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 8A PD Total Dissipation @TC=25℃ 50 W TJ Max. ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current...