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Inchange Semiconductor

IRF830FI Datasheet Preview

IRF830FI Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF830FI
DESCRIPTION
·Drain Current ID= 3.0A@ TC=25
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max)
·Fast Switching Speed
·Simple Drive Requirements
APPLICATIONS
·Desinged for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
PD
Tj
Tstg
Drain-Source Voltage (VGS=0)
500 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=253 A
Power Dissipation@TC=25
35 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67
80
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

IRF830FI Datasheet Preview

IRF830FI Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF830FI
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-stage Resistance VGS= 10V; ID= 2.5A
IGSS Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0
VSD Diode Forward Voltage
IF= 3A; VGS= 0
MIN MAX UNIT
500 V
24V
1.5 Ω
±500 nA
250 uA
1.6 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number IRF830FI
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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