IRFBC40R Key Features
- Lower Input Capacitance -Improved Gate Charge -Extended Safe Operating Area -Rugged Gate Oxide Technology
- Part: IRFBC40R
- Manufacturer: Inchange Semiconductor (official site)
- Size: 61.05 KB
Other IRFBC40R Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
IRFBC40 | N-Channel Power MOSFET |
Intersil |
IRFBC40 | N-Channel Power MOSFET |
International Rectifier |
IRFBC40 | Power MOSFET |
Fairchild |
IRFBC40 | N-Channel Power MOSFET |
Vishay |
IRFBC40 | Power MOSFET |
IRFBC40R Description
·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±20 V V ID Drain Current-Continuous 6.2 A IDM Drain Current-Single Pluse 25 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...