IRFBC40 Overview
IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching...
IRFBC40 Key Features
- 6.2A, 600V
- rDS(ON) = 1.200Ω
- Single Pulse Avalanche Energy Rated
- Simple Drive Requirements
- Ease of Paralleling
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
