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Inchange Semiconductor

IRFP150FI Datasheet Preview

IRFP150FI Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP150FI
FEATURES
·Drain Current ID= 23A@ TC=25
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.055Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
±20
V
V
ID Drain Current-Continuous
23 A
IDM Drain Current-Single Pluse
92 A
PD Total Dissipation @TC=25
60 W
TJ
Max. Operating Junction Temperature
-55~150
Tstg Storage Temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.7 /W
Rth j-a Thermal Resistance, Junction to Ambient 30 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor

IRFP150FI Datasheet Preview

IRFP150FI Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP150FI
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 22A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 100V; VGS= 0
VSD Forward On-Voltage
IS= 23A; VGS= 0
MIN MAX UNIT
100 V
24V
0.055
Ω
±100
nA
250 μA
2.5 V
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number IRFP150FI
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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