IRFP350 transistor equivalent, n-channel mosfet transistor.
*Drain Current
–ID= 16A@ TC=25℃
*Drain Source Voltage-
: VDSS= 400V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max)
*Fast Sw.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
400
V
VGS
Gate-Source .
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