| Part Number | IRFP350 |
|---|---|
| Manufacturer | Intersil |
| Overview |
IRFP350
Data Sheet July 1999 File Number
2319.4
16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advan.
* 16A, 400V * rDS(ON) = 0.300Ω * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Infor. |
IRFP350 Datasheet
The IRFP350 is a N-Channel Power MOSFET.
| Part Number | IRFP350 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
400
V
VGS
Gate-Source.
*Drain Current *ID= 16A@ TC=25℃ *Drain Source Voltage- : VDSS= 400V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode p. |
| Part Number | IRFP350 |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | . . |
| Part Number | IRFP350 |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
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IRFP350
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Cu.
* Avalanche Rugged Technology * Rugged Gate Oxide Technology * Lower Input Capacitance * Improved Gate Charge * Extended Safe Operating Area * Lower Leakage Current: 10µA (Max.) @ VDS = 400V * Low RDS(ON): 0.254Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG. |