IRFP351 - N-Channel MOSFET Transistor

Inchange Semiconductor

IRFP351 Datasheet Preview — Preview of IRFP351 PDF

Datasheet Details

Part number	IRFP351
Manufacturer	Inchange Semiconductor
File Size	237.05 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRFP351-InchangeSemiconductor.pdf

IRFP351 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 350 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 60 A PD Total Dissipation @TC=25℃ 150 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R

Features

Drain Current.
ID= 15A@ TC=25℃.
Drain Source Voltage- : VDSS= 350V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 7, 2016 |