Datasheet Details
| Part number | IRFS350A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 58.88 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 IRFS350A Datasheet
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| Part number | IRFS350A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 58.88 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
IRFS350A Datasheet
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±30 V V ID Drain Current-Continuous 11.5 A IDM Drain Current-Single Pluse 68 A PD Total Dissipation @TC=25℃ 92 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.35 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS350A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRFS350A | Power MOSFET | Fairchild Semiconductor |
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IRFS350 | Power MOSFET | Fairchild Semiconductor |
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