IRFZ34N Key Features
- Advanced Process Technology -Dynamic dv/dt Rating -175°C Operating Temperature -Fast Switching -Fully Avalanche Rated
- Part: IRFZ34N
- Manufacturer: Inchange Semiconductor (official site)
- Size: 59.46 KB
Other IRFZ34N Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRFZ34N | Power MOSFET |
ART CHIP |
IRFZ34N | Power MOSFET |
|
International Rectifier |
IRFZ34NL | Power MOSFET |
|
International Rectifier |
IRFZ34NLPBF | Power MOSFET |
|
International Rectifier |
IRFZ34NPBF | HEXFET Power MOSFET |
IRFZ34N Description
·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current...