IRFZ40FI Key Features
- Typical RDS(on) = 0.022 -Avalanche Rugged Technology -100% Avalanche Tested -Low Gate Charge -High Current Capability
- Part: IRFZ40FI
- Manufacturer: Inchange Semiconductor (official site)
- Size: 54.48 KB
Other IRFZ40FI Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
IRFZ40FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
Samsung Electronics |
IRFZ40 | N-Channel Power MOSFETS |
Motorola Semiconductor |
IRFZ40 | Power Field Effect Transistors |
|
STMicroelectronics |
IRFZ40 | N-Channel Power MOS Transistors |
Vishay |
IRFZ40 | Power MOSFET |
IRFZ40FI Description
·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current...