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Inchange Semiconductor

KSD1691 Datasheet Preview

KSD1691 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector Current -IC= 5A
·Low Collector Saturation Voltage
: VCE(sat)= 0.3V(Max.)@ IC= 2A
·Complement to Type KSB1151
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in DC-DC converter, or driver of solenoid
or motor.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
60
V
60
V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
7
V
5
A
ICP
Collector Current-Pulse
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
8
A
1
A
20
W
1.3
150
-55~150
KSD1691
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




Inchange Semiconductor

KSD1691 Datasheet Preview

KSD1691 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 2A; IB= 0.2A
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 1V
hFE-2
DC Current Gain
IC= 2A; VCE= 1V
hFE-3
DC Current Gain
IC= 5A; VCE= 1V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A, IB1= -IB2= 0.2A;
RL= 5Ω; VCC= 10V
hFE-2 Classifications
O
Y
G
100-200 160-320 200-400
KSD1691
MIN TYP. MAX UNIT
0.3
V
1.2
V
10 μA
10 μA
60
100
400
50
1.0 μs
2.5 μs
1.0 μs
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number KSD1691
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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