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KSD1691 - Silicon NPN Power Transistor

General Description

High Collector Current -IC= 5A Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A Complement to Type KSB1151 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC con

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A ·Complement to Type KSB1151 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V 60 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7 V 5 A ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8 A 1 A 20 W 1.