INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5000
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
ICBO Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE DC Current Gain
IC= 0.5A ; VCE= 5V
fT Current-Gain—Bandwidth Product
VECF
C-E Diode Forward Voltage
tf Fall Time
IC= 0.5A; VCE= 10V
IF= 2.5A
IC= 2A , IB1= 0.6A ; IB2= -1.2A
RL= 100Ω; VCC= 200V
MIN TYP. MAX UNIT
8.0 V
1.5 V
10 μA
40 130 mA
8
3 MHz
2.0 V
0.4 μs
isc website：www.iscsemi.cn
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