| Part number | KSD5007 |
|---|---|
| Datasheet | KSD5007-InchangeSemiconductor.pdf |
| File Size | 122.76 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Breakdown Voltage- : IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
KSD5007 | NPN Triple Diffused Planar Silicon Transistor | Samsung semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| KSD5000 | Silicon NPN Power Transistor |
| KSD5001 | Silicon NPN Power Transistor |
| KSD5002 | Silicon NPN Power Transistor |
| KSD5003 | Silicon NPN Power Transistor |
| KSD5004 | Silicon NPN Power Transistor |
| KSD5005 | Silicon NPN Power Transistor |
| KSD5006 | Silicon NPN Power Transistor |
| KSD5010 | Silicon NPN Power Transistor |
| KSD5011 | Silicon NPN Power Transistor |
| KSD5012 | Silicon NPN Power Transistor |
