KSD5002 Description
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
KSD5002 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Part Number | Description |
|---|---|
| KSD5000 | Silicon NPN Power Transistor |
| KSD5001 | Silicon NPN Power Transistor |
| KSD5003 | Silicon NPN Power Transistor |
| KSD5004 | Silicon NPN Power Transistor |
| KSD5005 | Silicon NPN Power Transistor |
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.