KSD5001 Description
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V;.
KSD5001 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
KSD5001 | NPN Triple Diffused Planar Silicon Transistor |
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V;.