KSD5001
Overview
High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode.
| Part | KSD5001 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 122.34 KB |
Related Datasheets
- KSD5001 — Samsung Semiconductor — NPN Triple Diffused Planar Silicon Transistor
- KSD5005 — Samsung Semiconductor — NPN Triple Diffused Planar Silicon Transistor
- KSD5004 — Samsung Semiconductor — NPN Triple Diffused Planar Silicon Transistor
- KSD5003 — Samsung Semiconductor — NPN Triple Diffused Planar Silicon Transistor