KSD5003 Description
·High Breakdown Voltage- : IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V.
KSD5003 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
KSD5003 | NPN Triple Diffused Planar Silicon Transistor |
·High Breakdown Voltage- : IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V.