KSD5001 Description
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V;.
- Part: KSD5001
- Manufacturer: Inchange Semiconductor
- Size: 122.34 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
KSD5001 | NPN Triple Diffused Planar Silicon Transistor |