KSD5001
Overview
High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode.
- Part: KSD5001
- Description: Silicon NPN Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 122.34 KB
Datasheets by Manufacturer
- KSD5001 — Samsung Semiconductor — NPN Triple Diffused Planar Silicon Transistor
- KSD5005 — Samsung Semiconductor — NPN Triple Diffused Planar Silicon Transistor
- KSD5004 — Samsung Semiconductor — NPN Triple Diffused Planar Silicon Transistor
- KSD5003 — Samsung Semiconductor — NPN Triple Diffused Planar Silicon Transistor