Datasheet Details
| Part number | KSD5001 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 122.34 KB |
| Description | Silicon NPN Power Transistor |
| Download | KSD5001 Download (PDF) |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | KSD5001 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 122.34 KB |
| Description | Silicon NPN Power Transistor |
| Download | KSD5001 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current- Continuous 3.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5001 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A;
IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A;
IB= 0.8A ICBO Collector Cutoff Current VCB= 800V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSD5001 | NPN Triple Diffused Planar Silicon Transistor | Samsung semiconductor |
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