KSD5015 Description
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
- Part: KSD5015
- Manufacturer: Inchange Semiconductor
- Size: 129.82 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
KSD5015 | NPN Transistor |