| Part number | KSD5012 |
|---|---|
| Datasheet | KSD5012-InchangeSemiconductor.pdf |
| File Size | 131.63 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| KSD5010 | Silicon NPN Power Transistor |
| KSD5011 | Silicon NPN Power Transistor |
| KSD5013 | Silicon NPN Power Transistor |
| KSD5014 | Silicon NPN Power Transistor |
| KSD5015 | Silicon NPN Power Transistor |
| KSD5016 | Silicon NPN Power Transistor |
| KSD5000 | Silicon NPN Power Transistor |
| KSD5001 | Silicon NPN Power Transistor |
| KSD5002 | Silicon NPN Power Transistor |
| KSD5003 | Silicon NPN Power Transistor |
