KSD5014 Description
·High Breakdown Voltage- : IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V.
- Part: KSD5014
- Manufacturer: Inchange Semiconductor
- Size: 129.90 KB
Related Inchange Semiconductor Datasheets
| Part Number | Description |
|---|---|
| KSD5010 | Silicon NPN Power Transistor |
| KSD5011 | Silicon NPN Power Transistor |
| KSD5012 | Silicon NPN Power Transistor |
| KSD5013 | Silicon NPN Power Transistor |
| KSD5015 | Silicon NPN Power Transistor |