KSD5018 Datasheet | Fairchild Semiconductor

Built-in Resistor at B-E for Motor Drive - High Voltage Power Darlington TR TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector- Base Voltage Collector- Emitter Voltage Emitter Base Voltage Collector Current (DC) - Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 600 275 10 4 6 0.5 40 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) BVCER ICES IEBO VCE(sat) VBE(sat) Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = 1.5A, IB = 0.05A, L = 25m H IC = 1m A, RBE = 330Ω VCE = 500V V EB= 10V, IC = 0 IC = 2A, IB = 5m A IC = 3A, IB = 20m A IC = 2A, IB = 5m A Min. 275 600 1 1 1.5 1.5 2 Max. Units V V m A m A V V V ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = 5V IC = 400 IB h FE, DC CURRENT GAIN V BE(sat) VCE(sat) 10 0.01 0.1 0.1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation...