KSD5016 Description
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
- Part: KSD5016
- Manufacturer: Inchange Semiconductor
- Size: 129.92 KB
Related Inchange Semiconductor Datasheets
| Part Number | Description |
|---|---|
| KSD5010 | Silicon NPN Power Transistor |
| KSD5011 | Silicon NPN Power Transistor |
| KSD5012 | Silicon NPN Power Transistor |
| KSD5013 | Silicon NPN Power Transistor |
| KSD5014 | Silicon NPN Power Transistor |