MJB44H11
MJB44H11 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector-Emitter saturation voltage
- Pb-free package are available
- Fast switching speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- General purpose amplification and switching such as out or driver stages in applications such as switching regulators,converters and power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO VEBO
IC ICP
TJ Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse Total Power Dissipation @ Ta=25℃ Total Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
2 W
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.5 ℃/W
Rth j-a
Thermal Resistance,Junction to Ambient 75
℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL...
