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Inchange Semiconductor

MJE13002 Datasheet Preview

MJE13002 Datasheet

Silicon NPN Power Transistors

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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE13002
DESCRIPTION
With TO-126 package
High voltage ,high speed
APPLICATIONS
Particularly suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
IB Base current
IBM Base current-Peak
IE Emitter current
IEM Emitter current-Peak
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
600
300
9
1.5
3
0.75
1.5
2.25
4.5
40
150
-65~150
UNIT
V
V
V
A
A
A
A
A
A
W
MAX
3.12
UNIT
/W
Free Datasheet http://www.datasheet4u.com/




Inchange Semiconductor

MJE13002 Datasheet Preview

MJE13002 Datasheet

Silicon NPN Power Transistors

No Preview Available !

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE13002
CHARACTERISTICS
Tj=25 unles otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0
300
V
VCEsat-1
VCEsat-2
VCEsat-3
Collector-emitter saturation voltage IC=0.5A; IB=0.1A
Collector-emitter saturation voltage
IC=1A; IB=0.25A
TC=100
Collector-emitter saturation voltage IC=1.5A;IB=0.5A
VBEsat-1 Base-emitter saturation voltage
VBEsat-2 Base-emitter saturation voltage
ICEV Collector cut-off current
IEBO Emitter cut-off current
IC=0.5A; IB=0.1A
IC=1A; IB=0.25A
TC=100
VCEV=Rated value; VBE (off) =1.5V
TC=100
VEB=9V; IC=0
0.5 V
1.0
1.0
V
3.0 V
1.0 V
1.2
1.1
V
1.0
5.0
mA
1.0 mA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
8 40
hFE-2
fT
COB
DC current gain
Transition frequency
Collector outoput capacitance
IC=1A ; VCE=2V
IC=0.1A ; VCE=10V;f=1MHz
IE=0;f=0.1MHz ; VCB=10V
5 25
4 MHz
21 pF
Switching times resistive load
td Delay time
tr Rise time
ts Storage time
tf Fall time
VCC=125V ,IC=1A
IB1=-IB2=0.2A
tp=25 s
duty cycle 1%
0.05 0.1
0.5 1.0
2.0 4.0
0.4 0.7
s
s
s
s
2
Free Datasheet http://www.datasheet4u.com/


Part Number MJE13002
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
Total Page 3 Pages
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