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MJE13002 - NPN SILICON POWER TRANSISTOR

General Description

The UTC MJE13002 designed for use in high

volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.

Key Features

  • Collector-Emitter Sustaining Voltage: VCEO (sus)=300V.
  • Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max. ) @IC=1.0A, IB =0.25A.
  • Switch Time- tf =0.7μs(Max. ) @IC=1.0A.

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Other Datasheets by Unisonic Technologies

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MJE13002-E HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. „ FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @IC=1.0A.