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MMBR901L

Manufacturer: Inchange Semiconductor
MMBR901L datasheet preview

Datasheet Details

Part number MMBR901L
Datasheet MMBR901L-InchangeSemiconductor.pdf
File Size 95.90 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN RF Transistor
MMBR901L page 2

MMBR901L Overview

·Low Noise ·High Power Gain- Gpe = 12.0 dB TYP. @ f = 1 GHz APPLICATIONS ·Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA.

MMBR901LT1 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Motorola Logo MMBR901LT1 NPN Silicon High-Frequency Transistor Motorola
Motorola Logo MMBR901LT3 NPN Silicon High-Frequency Transistor Motorola
Lunsure Electronic Logo MMBR901 NPN Silicon High-Frequency Transistor Lunsure Electronic
Motorola Logo MMBR901 RF AMPLIFIER TRANSISTOR Motorola
Inchange Semiconductor logo - Manufacturer

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