MMBR901L Overview
·Low Noise ·High Power Gain- Gpe = 12.0 dB TYP. @ f = 1 GHz APPLICATIONS ·Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA.
| Part number | MMBR901L |
|---|---|
| Datasheet | MMBR901L-InchangeSemiconductor.pdf |
| File Size | 95.90 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
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·Low Noise ·High Power Gain- Gpe = 12.0 dB TYP. @ f = 1 GHz APPLICATIONS ·Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MMBR901LT1 | NPN Silicon High-Frequency Transistor | Motorola |
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MMBR901LT3 | NPN Silicon High-Frequency Transistor | Motorola |
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MMBR901 | NPN Silicon High-Frequency Transistor | Lunsure Electronic |
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MMBR901 | RF AMPLIFIER TRANSISTOR | Motorola |
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