MMBR901L
MMBR901L is Silicon NPN RF Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Noise
- High Power Gain-
Gpe = 12.0 d B TYP. @ f = 1 GHz
APPLICATIONS
- Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
25 V
VCEO Collector-Emitter Voltage
15 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
Collector Power Dissipation @TC= 75℃
TJ Junction Temperature
Tstg Storage Temperature Range
2V
30 m A
0.3 W
150 ℃
-55~150
℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1m A ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1m A ; IE=...
