MMBR901 - NPN Silicon High-Frequency Transistor

Lunsure Electronic

General Description

High Current-Gain Bandwidth Products Low Noise Figure @ f=1.0GHz NF(matched)=1.9dB (Typ) High Power Gain Gpe(matched)=12.0dB (Typ) @ f=1.0GHz Operating & Storage Temperature: -55°C to +150°C Marking Code: 7A MAXIMUM RA

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MMBR901 npn silicon high-frequency transistor by Lunsure Electronic - Datasheet Preview

Datasheet Details

Part number	MMBR901
Manufacturer	Lunsure Electronic
File Size	187.42 KB
Description	NPN Silicon High-Frequency Transistor
Datasheet	MMBR901 Datasheet

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Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBR901 Description • High Current-Gain – Bandwidth Products • Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ) • High Power Gain – Gpe(matched)=12.0dB (Typ) @ f=1.0GHz • Operating & Storage Temperature: -55°C to +150°C • Marking Code: 7A MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VCEO 15 Vdc VCBO 25 Vdc VEBO 2.0 Vdc Collector Current - Continuous IC 30 mAdc Thermal Resistance, Junction to Case RqJC 250 oC/W Power Dissipation @ TC=75oC (1) Derate above 75oC PD(max) 0.300 4.