Part MMBR901
Description NPN Silicon High-Frequency Transistor
Category Transistor
Manufacturer Lunsure Electronic
Size 187.42 KB
Lunsure Electronic

MMBR901 Overview

Description

High Current-Gain – Bandwidth Products - Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ) - High Power Gain – Gpe(matched)=12.0dB (Typ) @ f=1.0GHz - Operating & Storage Temperature: -55°C to +150°C - Marking Code: 7A Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VCEO 15 Vdc VCBO 25 Vdc VEBO 2.0 Vdc Collector Current - Continuous IC 30 mAdc RqJC 250 oC/W Power Dissipation @ TC=75oC (1) Derate above 75oC PD(max) 0.300 4.0 Watt mW/oC Characteristics OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0mAdc, IB = 0) Collector-Base Breakdow n Voltage (IC = 0.1mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1mAdc, IC = 0) Collector Cutoff Current.