Datasheet Details
| Part number | MMBR901L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 95.90 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet | MMBR901L-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product.
| Part number | MMBR901L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 95.90 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet | MMBR901L-InchangeSemiconductor.pdf |
|
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|
·Low Noise ·High Power Gain- Gpe = 12.0 dB TYP.
@ f = 1 GHz APPLICATIONS ·Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 2V 30 mA 0.3 W 150 ℃ -55~150 ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR901L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
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