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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR901L
DESCRIPTION ·Low Noise ·High Power Gain-
Gpe = 12.0 dB TYP. @ f = 1 GHz
APPLICATIONS ·Designed for use in high gain ,low noise , small signal
amplifiers for operation up to 2.5GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
25 V
VCEO Collector-Emitter Voltage
15 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation @TC= 75℃
TJ Junction Temperature
Tstg Storage Temperature Range
2V
30 mA
0.3 W
150 ℃
-55~150
℃
isc website:www.iscsemi.