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MMBR901L - Silicon NPN RF Transistor

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Part number MMBR901L
Manufacturer Inchange Semiconductor
File Size 95.90 KB
Description Silicon NPN RF Transistor
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Description

Low Noise High Power Gain- Gpe = 12.0 dB TYP.@ f = 1 GHz APPLICATIONS Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 2V 30 mA 0.3 W 1

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