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MMBR901L - Silicon NPN RF Transistor

General Description

Low Noise

Gpe = 12.0 dB TYP.

amplifiers for operation up to 2.5GHz.

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR901L DESCRIPTION ·Low Noise ·High Power Gain- Gpe = 12.0 dB TYP. @ f = 1 GHz APPLICATIONS ·Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 2V 30 mA 0.3 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.