MMBR951L - Silicon NPN RF Transistor

Inchange Semiconductor

General Description

Low Noise High Current-Gain Bandwidth Product APPLICATIONS

amplifiers.

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MMBR951L silicon npn rf transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	MMBR951L
Manufacturer	Inchange Semiconductor
File Size	170.33 KB
Description	Silicon NPN RF Transistor
Datasheet	MMBR951L Datasheet

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR951L DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in high gain , low noise small-signal amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 V 100 mA 0.322 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.