Datasheet Details
| Part number | NJW0281G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.22 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 NJW0281G Datasheet
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| Part number | NJW0281G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.22 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
NJW0281G Datasheet
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High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) Good Linearity of hFE Complement to Type NJW0302G Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector
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