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NJW0281G Datasheet Preview

NJW0281G Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
NJW0281G
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min)
·Good Linearity of hFE
·Complement to Type NJW0302G
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high fidelity audio amplifier and
other linear applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1.5
A
150
W
150
Tstg
Storage Temperature Range
-65~150
isc websitewww.iscsemi.com
1
isc & iscsemi is registered trademark




Inchange Semiconductor

NJW0281G Datasheet Preview

NJW0281G Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
NJW0281G
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
VBE(on) Base−Emitter On Voltage
IC = 5.0 A, VCE = 5.0 V
ICBO
Collector Cutoff Current
VCB= 250V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A ; VCE= 5V
hFE1
DC Current Gain
IC= 1A ; VCE= 5V
hFE2
DC Current Gain
IC= 3A ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC=-1A ; VCE= 5V ;ftest= 1.0MHz
MIN TYP. MAX UNIT
250
V
1.0
V
1.2
V
10 μA
5
μA
75
150
75
150
75
150
700 pF
20
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number NJW0281G
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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