| Part number | NJW0281G |
|---|---|
| Datasheet | NJW0281G-InchangeSemiconductor.pdf |
| File Size | 213.22 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor NJW0281G TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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NJW0281G | Complementary NPN Power Bipolar Transistors | ON Semiconductor |
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NJW0281 | NPN Transistor | INCHANGE |
See all Inchange Semiconductor datasheets
| Part Number | Description |
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