TIP3055T transistor equivalent, silicon npn power transistor.
*Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAM.
*Excellent Safe Operating Area
*DC Current Gain-
: hFE=20-70@IC = 4A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC = 4A
*Complement to Type TIP2955T
*Minimum Lot-to-Lot variations for robust device
performance a.
Image gallery
Download