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2SD110 Datasheet Preview

2SD110 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTIONV
·High Power Dissipation-
: PC= 100W@TC= 25
·High Current Capability-
: IC = 10A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
IE
Emitter Current-Continuous
10
A
IB
Base Current-Continuous
3
A
PC
Collector Power Dissipation @TC=25100
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65~150
2SD110
isc websitewww.iscsemi.com
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Inchange Semiconductor Company

2SD110 Datasheet Preview

2SD110 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 50V; f= 1MHz
hFE-2 Classifications
R
O
Y
30-90 50-150 100-300
2SD110
MIN TYP. MAX UNIT
110
V
10
V
1.5
V
2.5
V
0.5 mA
10 mA
30
300
10
1
MHz
200
pF
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SD110
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor Company
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