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2SD110 - Silicon NPN Power Transistor

2SD110 Description

isc Silicon NPN Power Transistor .
High Power Dissipation- : PC= 100W@TC= 25℃. High Current Capability- : IC = 10A. Minimum Lot-to-Lot variations for robust device perform.

2SD110 Applications

* Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 10 V IC Collector Current-

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