2SD1105 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) - Wide Area of Safe Operation - High Power and High Reliability - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SD1105 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 207.33 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SD1101 | Kexin Semiconductor | Silicon NPN Transistor |
| 2SD1101 | Hitachi Semiconductor | NPN TRANSISTOR |
| 2SD1101 | Renesas | Silicon NPN Transistor |