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Inchange Semiconductor Company

2SD1105 Datasheet Preview

2SD1105 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Wide Area of Safe Operation
·High Power and High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
30
A
200
W
150
Tstg
Storage Temperature Range
-65~150
2SD1105
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor Company

2SD1105 Datasheet Preview

2SD1105 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC= 5A ; VCE= 4V
VCB= 40V; IE= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V
2SD1105
MIN TYP. MAX UNIT
80
V
7
V
2
V
1.5
V
30 μA
40
40
120
1
MHz
hFE-2 Classifications
P
O
40-80
60-120
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SD1105
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor Company
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