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1EDI10I12MH - Single channel IGBT gate driver

Description

The 1EDIxxI12MH are galvanically isolated single channel IGBT driver in a PG-DSO-8-59 package that provide output currents up to 3 A and an integrated active Miller clamp circuit with the same current rating to protect against parasitic turn on.

Features

  • Single channel isolated gate driver.
  • For 600 V/650 V/1200 V IGBTs, MOSFETs, and SiC MOSFETs.
  • Up to 6 A typical peak current at rail-to-rail output.
  • Active Miller clamp.
  • Galvanically isolated coreless transformer driver.
  • Wide input voltage operating range.
  • Suitable for operation at high ambient temperature and in fast switching.

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Datasheet preview – 1EDI10I12MH

Datasheet Details

Part number 1EDI10I12MH
Manufacturer Infineon
File Size 501.59 KB
Description Single channel IGBT gate driver
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Full PDF Text Transcription

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1EDIxxI12MH EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC with clamp in wide body package Features • Single channel isolated gate driver • For 600 V/650 V/1200 V IGBTs, MOSFETs, and SiC MOSFETs • Up to 6 A typical peak current at rail-to-rail output • Active Miller clamp • Galvanically isolated coreless transformer driver • Wide input voltage operating range • Suitable for operation at high ambient temperature and in fast switching applications Potential applications • AC and brushless DC motor drives • High voltage DC/DC-converter and DC/AC-inverter • Induction heating resonant application • UPS-systems • Welding • Solar Product type 1EDI10I12MH 1EDI20I12MH 1EDI30I12MH Minimum output current and configuration ±1.0 A with 1.0 A Miller clamp ±2.0 A with 2.
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