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2EDL23N06PJ Datasheet 600V Half Bridge Gate Driver

Manufacturer: Infineon

Download the 2EDL23N06PJ datasheet PDF. This datasheet also includes the 2EDL23I06PJ variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2EDL23I06PJ-Infineon.pdf) that lists specifications for multiple related part numbers.

General Description

The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations.

Based on the used SOI-technology there is an excellent ruggedness on transient voltages.

No parasitic thyristor structures are present in the device.

Overview

2EDL23 family 2EDL23x06PJ family 600 V Half Bridge Gate Driver with OCP and Integrated Bootstrap.

Key Features

  • Infineon thin-film-SOI-technology.
  • Fully operational to +600 V.
  • Integrated Ultra-fast, low RDS(ON) Bootstrap Diode.
  • Floating channel designed for bootstrap operation.
  • Output source/sink current capability +1.8 A/-2.5 A.
  • Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology.
  • Interlock, Enable, Fault, and over current protection.
  • 10 ns typ. , 60 ns max. propagation delay matching.
  • dV/dt immune ±50 V.

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