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6ED003L02-F2 - 200V 3-phase gate driver

Download the 6ED003L02-F2 datasheet PDF. This datasheet also covers the 6ED003L06-F2 variant, as both devices belong to the same 200v 3-phase gate driver family and are provided as variant models within a single manufacturer datasheet.

General Description

The devices are full bridge drivers to control power devices like MOSFET or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V.

Based on the used SOI-technology there is an excellent ruggedness on transient voltages.

No parasitic thyristor structures are present in the device.

Key Features

  • Infineon thin-film-SOI-technology.
  • Maximum blocking voltage +600 V.
  • Output source/sink current +0.165 A/-0.375 A.
  • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology.
  • Separate control circuits for all six drivers.
  • Detection of over current and under voltage supply.
  • Externally programmable delay for fault clear after over current detection.
  • 'Shut down' of all switches during e.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (6ED003L06-F2-Infineon.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
6ED003L06-C2 High voltage gate driver
6ED003L06-F2 200V 3-phase gate driver
6ED2230S12T 1200V Three Phase Gate Driver
6ED2742S01Q 160V pre-regulated three phase SOI gate driver
6EDL04I065NR three-phase gate driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
6ED003-F2 family 6ED003L02-F2 and 6ED003L06-F2 family 200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN) and Fault Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +600 V • Output source/sink current +0.165 A/-0.375 A • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology • Separate control circuits for all six drivers • Detection of over current and under voltage supply • Externally programmable delay for fault clear after over current detection • 'Shut down' of all switches during error conditions • Signal interlocking of every phase to prevent crossconduction Potential applications Product summary VOFFSET (6ED003L06-F2) VOFFSET (6ED003L02-F2) IO+/- (typ.