AIMW120R060M1H
AIMW120R060M1H is MOSFET manufactured by Infineon.
Features
- Revolutionary semiconductor material
- Silicon Carbide
Gate pin 1
- Very low switching losses
- Threshold-free on state characteristic
- IGBT-patible driving voltage (18V for turn-on)
- 0V turn-off gate voltage
- Benchmark gate threshold voltage, VGS(th)=4.5V
- Fully controllable dv/dt
- mutation robust body diode, ready for synchronous rectification
- Temperature independent turn-off switching losses
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system plexity and cost
12 3
Potential Applications
- On-board Charger/PFC
- Booster/DC-DC Converter
Product validation
Qualified for Automotive Applications. Product Validation according to AEC-Q100/101
Drain pin 2
Sou rce pin 3
Table 1
Key Performance and Package Parameters
Type
RDS(on),typ
(Tvj = 25°C, ID = 13A,
Tvjmax
(TC=25°C, Rth(j-c,max))
VGS = 18V)
AIMW120R060M1H 1200V
36A
60mΩ
175°C...
