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Infineon Technologies Electronic Components Datasheet

AUIRF2804 Datasheet

Power MOSFET

No Preview Available !

 
AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
D
AUIRF2804
AUIRF2804S
AUIRF2804L
40V
1.5m
2.0m
270A
195A
D
GDS
TO-220AB
AUIRF2804
G
Gate
S
G
D2Pak
AUIRF2804S
D
Drain
S
GD
TO-262
AUIRF2804L
S
Source
Base part number
AUIRF2804
AUIRF2804L
AUIRF2804S
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF2804
AUIRF2804L
AUIRF2804S
AUIRF2804STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
270
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
190
195
1080
300
2.0
A
W
W/°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
± 20 V
540
1160
mJ
See Fig.15,16, 12a, 12b
A
mJ
-55 to + 175
 
°C 
300  
10 lbf•in (1.1N•m)
 
Thermal Resistance  
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
0.50
–––
Max.
0.50
–––
62
40
Units
°C/W
1 2015-9-30


Infineon Technologies Electronic Components Datasheet

AUIRF2804 Datasheet

Power MOSFET

No Preview Available !

  AUIRF2804/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on) SMD
RDS(on) TO-220
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.031 ––– V/°C Reference to 25°C, ID = 1mA
–––
–––
1.5
1.8
2.0
2.3
m
VGS
VGS
=
=
10V,
10V,
ID
ID
=
=
75A
75A


2.0 ––– 4.0 V VDS = VGS, ID = 250µA
130 ––– ––– S VDS = 10V, ID = 75A
–––
–––
–––
–––
20
250
µA
VDS =40 V, VGS = 0V
VDS =40V,VGS = 0V,TJ =125°C
–––
–––
––– 200
––– -200
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics  
––– 160 240
––– 41 62
––– 66 99
––– 13 –––
––– 120 –––
––– 130 –––
––– 130 –––
––– 4.5 –––
––– 7.5 –––
––– 6450 –––
––– 1690 –––
––– 840 –––
––– 5350 –––
––– 1520 –––
––– 2210 –––
ID = 75A
nC   VDS = 32V
VGS = 10V
VDD = 20V
ns
ID = 75A
RG= 2.5
VGS = 10V
Between lead,
nH
 
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
pF  
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 32V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
–––
–––
––– 270
––– 1080
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
––– ––– 1.3 V TJ = 25°C,IS = 75A,VGS = 0V 
––– 56 84 ns TJ = 25°C ,IF = 75A, VDD = 20V
––– 67 100 nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.24mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
This value determined from sample failure population, starting TJ = 25°C, L = 0.24mH, RG = 25, IAS = 75A, VGS =10V.
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
Max RDS(on) for D2Pak and TO-262 (SMD) devices.
TO-220 device will have an Rth value of 0.45°C/W.
All AC and DC test condition based on old Package limitation current = 75A.
2 2015-9-30


Part Number AUIRF2804
Description Power MOSFET
Maker Infineon
Total Page 13 Pages
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