AUIRF2804
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, Ro HS pliant
- Automotive Qualified
-
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.
VDSS RDS(on) typ. max.
ID (Silicon Limited) ID (Package Limited)
AUIRF2804 AUIRF2804S AUIRF2804L
40V 1.5m 2.0m 270A
195A
TO-220AB AUIRF2804
G Gate
D2Pak AUIRF2804S
D Drain
S GD
TO-262 AUIRF2804L
S Source
Base part...
